ON Semiconductor IGBT Portfolio expands with nine new devices

23rd October 2012
Posted By : ES Admin
ON Semiconductor IGBT Portfolio expands with nine new devices

ON Semiconductor has expanded its NGBTxx family of 1200 volt trench field stop IGBT devices with nine new energy efficient solutions. The new devices improve overall system switching efficiency, lower power dissipation and improve system reliability. Adding to the company's existing family of over thirty IGBTs, the newest devices expand the available product ratings up to 40 A. This includes devices specifically targeted at high performance power conversion in solar power and UPS implementations.

“Dramatic increases in global energy consumption and projected unfavorable environmental and economic impacts continue to drive demand for higher performance power discrete components,” said John Trice, senior director and general manager for ON Semiconductor’s Power Discrete products. “This new generation of devices brings cost-effective, industry-leading power efficiency without sacrificing robustness. With ON Semiconductor’s proprietary Trench Field Stop Technology, we can now give engineers a greater breadth of options to choose from when implementing their power system designs.”

The first group of new IGBTs are the NGTB40N120FLWG, NGTB25N120FLWG and NGTB15N120FLWG. These products feature a robust and cost effective trench technology construction, and provide superior performance in high frequency switching applications.. Low switch losses and an ultra fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. The devices have IC rating of 40 A, 25 A and 15 A respectively. All three devices are highly optimized for switching applications with frequencies from 10 kilohertz (kHz) to 40 kHz, delivering low on-state voltage (VCEsat) and low gate charge (Qg) characteristics, as well as exhibiting ultra-fast recovery and minimal switching losses to keep power dissipation low. These new IGBT devices all have an operational junction temperature range of −55 °C to +150 °C.

The second new group of devices also broaden the portfolio of Trench FS IGBT devices by increasing product ratings up to 40 A. The NGTB30N120LWG and NGTB40N120LWG offer low Vcesat and rugged short circuit characteristics with fast recovery diodes for low frequency (2 – 20 kHz) hard switching applications, such as motor control inverters applications. Complementing these devices are the NGTB30N120IHLWG, NGTB40N120IHLWG, NGTB20N120IHSWG, and NGTB30N120IHSWG, which feature balanced switching and conduction losses for induction heating and other soft switching applications operating at medium frequencies (15 – 30 kHz) including hot pots, rice cookers and microwave appliances.

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