Next-gen devices improve switching efficiency

2nd March 2018
Source: Nexperia
Posted By : Lanna Cooper
Next-gen devices improve switching efficiency

 

Nexperia has announced its NextPower 100V family of power MOSFETs which delivers low reverse recovery charge (Qrr) and includes parts that are qualified to 175°C in the LFPAK56 (PowerSO8) package.

NextPower 100V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability applications. With 50% lower RDS(on)and strong avalanche energy rating, they are well suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48V DC/DC adaptors.

The devices feature low body diode losses with QRR down to 50 nano-coulombs (nC) - resulting in lower reverse recovery current (IRR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.

Mike Becker, Product Manager for Power MOSFETs commented: “Qrr is a frequently overlooked parameter, yet it can have a significant effect on many design aspects. Low spiking means EMI is reduced, while optimised dead-time gives further efficiency gains, which is our driving ambition at Nexperia. We have shown that low Qrr is beneficial to both functions.”

The new NextPower 100V MOSFETs are available in three packages: TO220 and I2PAK thru-hole devices, and the widely acclaimed LFPAK56 package (SMT).

All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592, making NextPower 100V MOSFETs especially suitable for telecom and computing applications.

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