MOSFETs bring wide band gap performance benefits to applications

19th March 2019
Posted By : Lanna Cooper
MOSFETs bring wide band gap performance benefits to applications

ON Semiconductor has introduced two new Silicon Carbide (SiC) MOSFET devices. The industrial grade NTHL080N120SC1 and AEC-Q101 automotive grade NVHL080N120SC1 bring the enabling, wide ranging performance benefits of wide band gap technology to important high growth end application areas such as Automotive DCDC and onboard charger applications for electric vehicles as well as solar, and uninterruptible and server power supplies.

The announcement sees the strengthening of ON Semiconductor’s comprehensive and growing SiC ecosystem that features complementary devices including SiC diodes and SiC drivers, plus vital resources such as device simulation tools, SPICE models and application information to help design and systems engineers meet their high frequency circuit development challenges.

ON Semiconductor’s 1,200V, 80mΩ, SiC MOSFETs are rugged and align with the needs of modern high frequency designs. They combine high power density with highly efficient operation that can significantly reduce operating costs and overall system size due to smaller device footprints. These characteristics also mean less thermal management is required, further reducing Bill of Materials (BoM) costs, size and weight.

Key features and associated design benefits of the new devices include low leakage current, a fast intrinsic diode with low reverse recovery charge, which gives steep power loss reduction and supports higher frequency operation and greater power density, and low Eon and Eoff / fast turn ON and OFF combined with low forward voltage to reduce total power losses and therefore cooling requirements.

Low device capacitance supports the ability to switch at very high frequencies which reduces troublesome EMI issues; meanwhile, higher surge, avalanche capability, and robustness against short circuits enhances overall ruggedness, gives improved reliability and longer overall life expectancy.

A further benefit of ON Semiconductor’s new SiC MOSFET devices is a patented termination structure that adds to reliability and ruggedness and enhances operational stability.

The NVHL080N120SC1 has been designed to withstand high surge currents and offers high avalanche capability and robustness against short circuits. The AEC-Q101 qualification of the MOSFET plus other SiC devices offered, ensures they can be fully utilised in the growing number of in-vehicle applications emerging as a result of increasing electronic content and electrification of powertrains.

A maximum operating temperature of 175°C enhances suitability for use in automotive designs as well as other target applications where high density and space constraints are pushing up typical ambient temperatures.

Commenting on the introduction of new SiC MOSFET devices and the overall enhancement of ON Semiconductor’s wide band gap ecosystem, Gary Straker, Vice President and General Manager, Power MOSFET Division, Power Solutions Group, ON Semiconductor said: “Increasingly, the most important applications and current mega trends demand all-round performance beyond that of regular silicon devices.

"ON Semiconductor’s comprehensive SiC portfolio, enhanced by the introduction of these two new MOSFETs and supported by an ecosystem of tools and resources, means that not only can we provide the complete wide band gap component solution, but that we can lead engineers through the development and design-in process to achieve a solution that performs to expectations, is cost effective and has reliability coupled with longevity.”

ON Semiconductor’s SiC devices and solutions will be on display at this year’s APEC in Anaheim, CA, and the company plans on launching further wide band gap devices throughout 2019.

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