Saving space and claiming to increase power efficiency in portable electronics, the SiA936EDJ TrenchFET power MOSFET has been announced by Vishay. The manufacturer claims that the dual n-channel MOSFET features the industry's lowest on-resistance RDS(ON) for 20V (12 and 8VGS) devices at 4.5 and 2.5V gate drives in a 2x2mm footprint.
The MOSFET is suitable for load and charger switches, DC/DC converters, and H-bridges and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless DC motors.
In these applications, the dual-channel MOSFET provides low RDS(ON) of 34mΩ at 4.5V, 37mΩ at 3.7V, and 45mΩ at 2.5 V. Its on-resistance, at 2.5V, is 11.7% lower than the closest competing 8VGS device and 15.1% lower than the closest competing 12VGS device. This low on-resistance enables lower voltage drops, more efficient use of power and longer battery run times.
By integrating two MOSFETs into one compact, thermally enhanced PowerPAK SC-70 package, the SiA936EDJ can simplify design, lower overall component count, and save critical PCB space. The MOSFET is 100% Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. It also features built-in ESD protection of 2000V.
The dual n-channel TrenchFET power MOSFET is available now for sampling and in production quantities, with lead times of 12-14 weeks for larger orders.