MOSFET/GaN FET driver targets high-frequency applications

19th July 2019

Mick Elliott

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Datasheet

The LMG1210 200V half-bridge MOSFET and GaN FET driver from Texas Instruments (TI) is in stock at Mouser Electronics. Part of TI’s gallium nitride (GaN) power portfolio family, the LMG1210 enables higher efficiency, increased power density, and lower overall system size over traditional silicon-based alternatives, and it is optimised specifically for speed-critical power-conversion applications.

The 50MHz half-bridge driver designed to work with enhancement mode GaN FETs up to 200V. Engineered for maximum performance and highly efficient operation, it features an ultra-fast propagation delay of 10ns, which is faster than traditional silicon half-bridge drivers.

A low switch-node capacitance of 1pF with user-adjustable dead time control helps improve efficiency by allowing designers to optimise dead-time within their system.

The device offers 3.4ns high-side–to–low-side delay matching, a minimum pulse width of 4ns, and an internal LDO that ensures a gate-drive voltage of 5 V regardless of supply voltage.

The driver also includes a common-mode transient immunity (CMTI) of more than 300 V/ns — one of the industry’s highest — which enables high system-noise immunity.

A broad range of applications is covered, including high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power-conversion applications.