Mitsubishi Electric used the PCIM exhibition in Nuremberg to launch hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. These latest additions to the NFH series of power semiconductor modules enable design engineers to reduce electric power losses by 40%.
Featuring SiC Schottky Barrier Diodes (SBD) and Silicon IGBTs, the modules achieve high efficiency, downsizing and weight reduction in inverters. The Modules are designed for typical switching frequencies of more than 20 kHz.
The new hybrid SiC power modules are packaged as 2in1 configurations with a rating of 1200V and currents of 100A (CMH100DY-24NFH), 150A (CMH150DY-24NFH), 200A (CMH200DU-24NFH), 300A (CMH300DU-24NFH), 400A (CMH400DU-24NFH) or 600A (CMH600DU-24NFH).
All module packages are compatible with Mitsubishi Electric’s conventional pure-silicon based power modules. The 100A and 150A modules, which are integrated in a package with a footprint of 48mm x 94mm, offer a reduced internal inductance which is about 30% lower than in the conventional modules.
The 200A and 300A modules’ footprint measures 62mm x 108mm, while the 400A and 600A modules require just 80mm x 110mm baseplate size. Typical applications are uninterruptible power supplies (UPS) and medical device power supplies.