WCDMA Power Amplifiers for PC Data Communication in 3G and 4G Cellular Networks

Small data modems like USB and Mini PCI card require high output power due to the growing data traffic. Therefore, high efficiency at full output power is the key to cope with the limited heat dissipation in modules with small form factor. As the new GaAs power amplifiers are enabled by Mitsubishi Electric’s GaAs BiFET technology (bipolar FET) they operate at an industry-leading power-added efficiency (PAE) of 45 percent which means that the new devices reduce the heat emission while simultaneously decreasing the power consumption. The maximum output power of the amplifiers is 670mW (28.25dBm) with a power gain of 27 to 27.5dB, which can be set to a value of 13 to 13.5dB by using the built-in attenuator.

Each product is designed for an individual band. The BA012F1 for example is designed for the band 1 (1920 to 1980MHz) and BA012F2 is designed for band 2 (1850 to 1910MHz) while BA012F3 is designed for band 3 (1710 to 1785MHz), BA012F5 for band 5 (824 to 849MHZ) and BA012F8 for band 8 (880 to 915MHz). In these frequency bands the devices work with an adjacent channel leakage power ratio of -41dBc (ACLR5MHz) or, respectively, -55dBc (ACLR10MHz).

An integrated coupler enables the designer to monitor the output power. All five devices are integrated in packages measuring 3mm x 3mm x 1mm each, fully comply with the RoHS directive and are completely halogen-free according to IEC61249-2-21.