Power

Low-Noise GaAs HEMT for 12 – 20GHz range

28th September 2009
ES Admin
0
Mitsubishi has introduced the MGF4921AM, a low noise GaAs HEMT (High Electron Mobility Transistor) that is highly suitable for low noise amplifiers in satellite digital radio receivers as well as in DBS (direct broadcast satellite) receivers operating in the C band. The new device works from S to C bands with a typical noise figure of just 0.35dB at 2.4 or 4GHz, which is at the leading edge of the industry. At 2.4GHz it provides a gain of 18.0dB.
Compared to its 12GHz predecessor MGF4953A the new MGF4921AM operates with frequencies in the 12 to 20GHz range while simultaneously offering an improvement of the noise characteristic by 0.1dB when measured at 2.4GHz on a stable matching circuit. Like the previous model the new MGF4921AM is packaged in an industry standard 4-pin full-mold package.

The MGF4921AM is recommended to operate with a bias Drain current ID of 15mA (10mA in ref.) at a bias Drain-Source voltage of 2V.

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