M/A-COM Technology Solutions Announces New 500 W GaN on SiC HEMT Pulsed Power Transistor

Posted By : ES Admin
M/A-COM Technology Solutions Announces New 500 W GaN on SiC HEMT Pulsed Power Transistor

M/A-COM Technology Solutions introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications.

The MAGX-001214-500L00 provides 500W of output power with 19 dB of gain and 55% efficiency. The device also boasts very high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions. The device is assembled using state of the art design and packaging assembly, which enables the customer to reach higher gain and efficiency for today’s demanding applications.

“The transistor is a clear leader in high pulsed power GaN technology with 500W of output power combined with excellent gain, efficiency and rugged performance,” said Paul Beasly, Product Manager. “The device is an ideal candidate for customers looking to upgrade L-Band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM’s GaN Power Solutions.”

Operating between the 1200 MHz – 1400 MHz Frequency range, the MAGX-001214-500L00 is a highly robust transistor, boasting a mean time to failure of 5.3*106hours, and is available as both flanged and flangeless packaged devices.


You must be logged in to comment

Write a comment

No comments

Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

EMO Hannover 2019
16th September 2019
Germany Hannover
European Microwave Week 2019
29th September 2019
France Porte De Versailles Paris
HETT 2019
1st October 2019
United Kingdom EXCEL, London
World Summit AI 2019
9th October 2019
Netherlands Taets Park, Amsterdam
New Scientist Live 2019
10th October 2019
United Kingdom ExCeL, London