MACOM Announces New 150 W GaN on SiC HEMT Power Transistor
MACOM announced a new GaN on SiC HEMT Power Transistor for pulsed power applications.
The MAGX-000025-150000 is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for a variety of RF power amplifier applications. The MAGX-000025-150000 provides 150 W of output power with 18 dB of gain and 58% efficiency. The device also boasts very high breakdown voltages, which allows for reliable and stable operation at more extreme load mismatch conditions. The device is offered in a four lead, Gemini package which allows for very broadband match with high performance.
“The 150 W power transistor in a Gemini style package offers the user incredible flexibility in operation. The device can be configured in a push-pull configuration for wideband, low distortion operation or operated in single-ended mode for a smaller size form factor,” said Paul Beasly, Product Manager.
Operating between the 1-2,500 MHz Frequency range, the MAGX-000025-150000 is a highly robust transistor, boasting a mean time to failure (MTTF) of 600 years, and is available as a flanged Gemini packaged Gemini devices.
The table below outlines typical performance:
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