nfineon’s new 4.5kV IHV modules display far higher energy efficiency and significantly lower switching losses. That represents a major technological advancement for our customers: Our IGBT solutions offer enhanced ruggedness and durability, particularly for extremely demanding applications like traction or HVDC systems,” says Martin Hierholzer, Vice President and General Manager Industrial Power at Infineon Technologies.
The new 4.5kV IHV modules combine the tried-and-tested TrenchSTOP™ and FieldSTOP™ technology and complement the modules Infineon already supplies in the 3300 and 6500 volt ranges. While the FieldSTOP™ structure within the power semiconductor ensures a significant reduction in switching losses, the TrenchSTOP™ cell minimizes on-state power losses because of its extremely low saturation voltage. This results in lower losses and reduced cooling requirements, which ultimately decreases the system costs. The advantages of the TrenchSTOP™ technology family furthermore include good ruggedness and short circuit behavior, increased reliability and low electromagnetic interference (EMI).
Infineon will launch the 4.5kV IHV modules for IGBT3/EC3 in two housing versions: initially in the IHM-B housing, the successor of the proven IHM-A module with a storage temperature down to minus 55°C and an operating temperature up to 150°C, and secondly in the highly insulated 6.5kV module housing. With an insulation voltage of 10.2kV, the module provides the clearance and creepage distances required particularly in traction applications.