Analog and mixed-signal semiconductor platform solutions provider, MagnaChip Semiconductor, has announced the introduction of a new High-Voltage Super Junction MOSFET with a 900V breakdown voltage and low total gate charge (Qg) (‘90R1K4P’).
The device with two package types, I-PAK and D-PAK, will sample to customers in November 2018 and will be manufactured in high volume in early first quarter of next year.
90R1K4P features the maximum peak voltage of 950V and a breakdown voltage as high as 900V, which enables enhanced system stability and reliability. It is well-suited for high-voltage applications such as:
90R1K4P increases its switching speed due to its low total gate charge (Qg), which reduces heat generation in the system, keeps power loss down and improves energy efficiency. It also enables smaller form factors than the High-Voltage Planar MOSFET, since the die size of 90R1K4P is more than 50% smaller under the same condition of conduction loss.
To enable the use of 90R1K4P product in small form factors, MagnaChip will house the device in a small I-PAK package type under the code MMIS90R1K4P. As a result of the die size reduction and choice of packaging, this new MOSFET has the potential to be adopted in a wide range of applications.
Moreover, to ensure 90R1K4P product can be adopted for applications where space is at a premium, the company also can mount the Super Junction MOSFET into the slim SMD (Surface-Mount Devices) package type, D-PAK. It will be available under the code MMD90R1K4P.
YJ Kim, CEO of MagnaChip, stated: “MagnaChip’s High-Voltage Super Junction MOSFET with a high breakdown voltage and a low total gate charge (Qg) will provide customers with high system reliability and energy efficiency. We will continue to develop products based on the newly launched High-Voltage Super Junction MOSFET and extend our product portfolio with a diverse line of Super Junction MOSFETs with improved performance.”