High storage density with new FRAM product
A new product has been introduced by Fujitsu, a FRAM product with a storage density of 8MB. The MB85R8M2T is particularly suitable for use in industrial automation and financial logging systems, where a high data throughput is required, and the integrity of the data is important.
The new product is equipped with a SRAM compatible parallel interface, aiming to offer a more efficient alternative to battery backup SRAM. Based on the features of FRAM as a non-volatile memory, such as fast overwrite at 150ns and read/write endurance of 1013, MB85R8M2T can replace a SRAM and remove the backup battery at the same time. As a result, manufacturers can achieve a more compact hardware system and a significant saving in component and maintenance cost combined with a commitment on long term product availability.
The MB85R8M2T offers a wide voltage range from 1.8 to 3.6V. It is available in a 48-pin FBGA package measuring 8.00x6.00mm.
MB85R8M2T is in mass production stage. Samples are available immediately from FEEU.
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