GaN transistors from GaN Systems now extend to 120A, 650V. The GaN E-HEMT increases the power density of 20 to 500 kW power conversion systems, including automotive traction inverters, very high power on-board chargers (OBC), large-scale energy storage systems, and industrial motor drives.
This transistor, with twice the current capability of GaN Systems’ highest rated current part, allows customers to effectively double the power processing for the same volume.
The GS-065-120-1-D is an enhancement mode GaN-on-silicon power transistor. It has been developed to meet the rising power levels creating the need for higher operating current. The company points out that GaN technology can be applied to much higher power levels today in the automotive, industrial, and renewable energy industries.
The GS-065-120-1-D E-HEMT transistors are sold as a die to customers building modules. It has the lowest RDS(on) and highest current 650V GaN HEMT in the power semiconductor industry, says the company. Modules are an important form factor in high power electronics constituting up to 40% of the market based on form factor. Applications will be to use this die product in half-bridge, full-bridge, and six pack module topologies to create enhanced, high-power designs.
GaN Systems implements its patented Island Technology cell layout for high-current die performance and yield.
Characteristics are a transient tolerant gate drive (-20 / +10V) and a high switching frequency of more than 10 MHz.
It has zero reverse recovery loss and a dual gate drive for optimised layout and paralleling. The transistor is RoHS-compliant and is available in a 12.56 x 5.6mm PCB footprint.