Expanding on its Gallium Nitride (GaN) power portfolio, Texas Instruments has announced two new high speed GaN Field-Effect Transistor (FET) drivers to create more efficient, higher performing designs in speed-critical applications such as Light Detection And Ranging (LIDAR) and 5G Radio Frequency (RF) envelope tracking. The LMG1020 and LMG1210 can deliver switching frequencies of 50MHz while improving efficiency and enabling five times smaller solution sizes previously not possible with silicon MOSFETs.
With an industry-best drive speed as well as a minimum pulse width of 1ns, the LMG1020 60MHz low side GaN driver enables high accuracy lasers in industrial LIDAR applications. The small Wafer-Level Chip-Scale (WCSP) Package of only 0.8x1.2mm helps minimise gate-loop parasitics and losses, further boosting efficiency.
The LMG1210 is a 50MHz half-bridge driver designed for GaN FETs up to 200V. The device’s adjustable dead time control feature is designed to improve efficiency as much as 5 percent in high speed DC/DC converters, motor drives, Class-D audio amplifiers as well as other power-conversion applications.
Designers can achieve high system-noise immunity with the Common-Mode Transient Immunity (CMTI) of more than 300V/ns.
Key features and benefits of the LMG1020 and LMG1210
TI’s GaN advantage
The LMG1020 and LMG1210 are the latest additions to the industry’s largest GaN power portfolio, ranging from 200V drivers to 80V and 600V power stages. With over seven million hours of GaN process reliability testing, TI is addressing the need for proven and ready-to-use solutions through reliable GaN products, bringing decades of silicon manufacturing expertise and advanced device-development talent to GaN technology.
TI is showcasing its extensive GaN portfolio and enabling GaN technology in booth No. 501 at the Applied Power Electronics Conference (APEC) in San Antonio, Texas, 4th-8th March 2018.