GaN ICs circuitry reduces frequency-related power losses

13th February 2017
Posted By : Caroline Hayes
GaN ICs circuitry reduces frequency-related power losses

Navitas believes it has developed the world’s first GaN power IC, based on its proprietary AllGaN technology.

Production quality 650V AllGaN power ICs are available from Navitas Semiconductor. The NV6131, NV6105 and NV6115 iDrive GaN ICs use the company’s proprietary AllGaN technology.

They offer a high-efficiency 650V, 160mΩ power FET, and the company says that the increasing integration of digital and analogue circuits lead to speed, energy efficiency and power density improvements and reduced system cost.


GaN can enable up to 100x higher frequencies than silicon but driving, controlling and protecting them has proved to be an industry challenge. Integrating the circuitry monolithically with the GaN power device eliminates these system level problems, says the company. It reports a 10 to 100x increase in system operating frequency, higher efficiencies to enable up to a 5x increase in power densities and 20% lower system costs.


The ICs can be used in mobile fast chargers, thin TVs, data centres, LED lighting, solar and electric vehicle markets. Power semiconductor market researcher, Dr. Hong Lin at Yole Developpement, commented: “it has been well-recognised that GaN has the potential to displace a large percentage of the $15billion power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds. The integration of logic, analogue and power in a GaN power IC solves this remaining roadblock and positions GaN to realise its full potential.”


The three ICs are available in a 5.0 x 6.0mm QFN package.

 


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