GaN FET is first to be qualified to 650V

16th May 2016
Posted By : Caroline Hayes
GaN FET is first to be qualified to 650V

Claimed to have the lowest Rds(on) in a TO-247 package, the TPH3207WS GaN FET was announced at PCIM 2016 by Transphorm

The JEDEC-qualified device has 41mΩ Rds(on) to reduce system volume by as much as 50% without sacrificing efficiency, says the company. Combined with low Qrr (175nC) the company believes it can enable power-dense solutions with reduced component count and improved reliability in high-voltage power conversion applications.

The system reliability, performance and power density in a cascode configuration suit hard-switched bridges and the continuous conduction mode (CCM) bridgeless totem-pole PFC designs that are used in power conversion, such as on-board chargers, solar inverters and telecomms power supplies. Cascode configuration (EZ-GaN) can be driven with off-the-shelf drivers.

The company claims that the FET enables more efficient topologies. It allows designers to reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs.


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

embedded world 2019
26th February 2019
Germany Nuremberg
Wearable Tech Show 2019
12th March 2019
United Kingdom London
AMPER 2019
19th March 2019
Czech Republic Brno Exhibition Centre
LOPEC 2019
19th March 2019
Germany Messe Munchen
RF & Microwave 2019
20th March 2019
France Paris Expo, Porte de Versailles