GaN FET is first to be qualified to 650V

16th May 2016
Posted By : Caroline Hayes
GaN FET is first to be qualified to 650V

Claimed to have the lowest Rds(on) in a TO-247 package, the TPH3207WS GaN FET was announced at PCIM 2016 by Transphorm

The JEDEC-qualified device has 41mΩ Rds(on) to reduce system volume by as much as 50% without sacrificing efficiency, says the company. Combined with low Qrr (175nC) the company believes it can enable power-dense solutions with reduced component count and improved reliability in high-voltage power conversion applications.

The system reliability, performance and power density in a cascode configuration suit hard-switched bridges and the continuous conduction mode (CCM) bridgeless totem-pole PFC designs that are used in power conversion, such as on-board chargers, solar inverters and telecomms power supplies. Cascode configuration (EZ-GaN) can be driven with off-the-shelf drivers.

The company claims that the FET enables more efficient topologies. It allows designers to reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs.

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