Power
GaN E-HEMTs available as 3.5A, 8A, and 11A devices
Availability and full design support capabilities for a new family of 650V GaN E-HEMTs from GaN Systems has been announced by Richardson RFPD. The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances.
They feature industry standard 5mm x 6mm PDFN packages, assembly using standard SMT process and are scalable from 3.5 A to 11 A in the same footprint.
Switching frequency is 20MHz+.
The devices also boast low switching losses, low EMI, high efficiency, Zero Qrr and bottom side cooling.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
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