Vishay Intertechnology has introduced the first two devices in its 600V EF Series of fast body diode n-channel power MOSFETs. With low reverse recovery charge and on-resistance, the Vishay SiHx28N60EF and SiHx33N60EF increase reliability and save energy in industrial, telecomms, computing and renewable energy applications.
Built on 2nd gen Super Junction Technology, the 600V fast body diode MOSFETs provide a complement to Vishay's existing standard E Series components, expanding the company's offering to devices that can be used in Zero Voltage Switching (ZVS) and soft switching topologies such as phase shifted bridges and LLC converter half bridges.
The SiHx28N60EF and SiHx33N60EF increase reliability in these applications by offering a 10 times lower reverse recovery charge (Qrr) than standard MOSFETs, according to Vishay. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress. In addition, the reduced Qrr results in lower reverse recovery losses compared to standard MOSFETs.
Offered in four packages, the 28A SiHx28N60EF and 33A SiHx33N60EF feature ultra-low on-resistance of 123 and 98Ω, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecomms power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, semiconductor capital equipment and LED/HID lighting.
The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant and halogen-free.
Samples of the EF Series MOSFETs are available. Production quantities will be available in early 2015, with lead times of 16 weeks for large orders.