GaN Systems has announced the availability of a new evaluation board using what is supposedly the world’s fastest combination of GaN power transistors and power drivers. Combining what the company claims to be best-in-class GaN transistors with the fastest commercially available GaN transistor driver on the GS61004B evaluation board, the GS61004B-EVBDC evaluation platform is now available with the latest in high-speed GaN E-HEMT drivers from Peregrine Semiconductor.
The evaluation kit (GS61004B-EVBDC) combines GaN Systems’ GS61004B power transistors with the fastest GaN transistor driver available – the PE29102 - from Peregrine Semiconductor. This combination on the GS61004B-EVBDC evaluation platform provides power design engineers with a host of added benefits, including:
The GS61004B GaN E-HEMTs used in conjunction with the PE29102 high-speed GaN E-HEMT Driver, generate low dead times to minimise crossover distortion in class-D applications. The PE29102’s set of phase-control pins enable the same part to be used for both phases in bridge-tied load (BTL) configurations - a technique used in audio amplifiers.
Commenting on this development, Paul Wiener, Vice President Strategic Marketing for GaN Systems, stated: “By providing an evaluation kit with GaN Systems’ world’s best power transistors and Peregrine Semiconductor’s fastest-ever GaN transistor driver, design engineers have an easy-to-use platform for optimising their system’s performance and gaining a competitive advantage. GaN Systems is pleased to provide yet one more tool that makes it easy to design with GaN transistors.”
“By enabling GaN to reach its performance potential, UltraCMOS technology and Peregrine are playing a role in GaN’s disruption into more mainstream applications,” said Mark Moffat, Director of Peregrine’s power management product line. “In the case of audio, GaN technology is enabling the next-gen of class-D audio advancements, and Peregrine is proud to enable GaN in audio and beyond.”