Targeting PFC for high power smart power stages, Toshiba Electronics Europe has introduced a four pin TO-247 MOSFET package. In conventional three pin TO-247 packages, parasitic induction at the source pin causes increased losses with increasing switching frequency. The TO-247 4L package is equipped with high speed DTMOS-H chips with low QGD to optimise switching behaviour.
With the TO-247 4L package, an additional source signal terminal is separated as a ‘Kelvin source’. By using this source pin, di/dt and switching efficiency can be increased. Compared to a three pin solution, the switching loss will be reduced by about 15%.
The DTMOS IV-H chips are made using Toshiba’s Deep Trench technology that delivers lower RDS(ON) at higher temperatures, compared to conventional super junction MOSFETs. It also offers reduced turn-off switching losses than previous technology. The combination of smaller increases in RDS(ON) at high temperatures and reduced switching losses provides higher efficiency for power supplies and assists designers in minimising system size.
The four pin TO-247 packaging style will initially be seen on four members of the DTMOS IV-H range, the TK25Z60X, TK31Z60X, TK39Z60X and TK62Z60X, all of which feature VDSS of 600V with RDS(ON) values of 40-125mΩ.
Samples of the packaging are available now and will enter mass production later this year.