Designing reliable and high density power solutions with GaN
In this two part series, Paul Brohlin, a GaN power development engineer at Texas Instruments, discusses how to design reliable and high density power solutions with TI's GaN Power Stages. In the first section, the advantages of GaN in power supplier performance and the advantages of TI integration of the driver and protection into a GaN Power Stage are explained.
In the two part presentation, Brohlin discusses the advantages of GaN over Silicon super junction MOSFETs, the advantages of TI's integrated power stage over discrete GaN devices, and also shows some example applications that demonstrate the performance advantages of GaN. Relevant TI GaN parts for the presentation are the LMG3410 and 3411 families of 600V GaN Power Stages and the LMG5200 80V GaN half bridge power stage.
Today, GaN is ready to enable designers to double the power supply density over what is achievable with super junction MOSFETs. TI's LMG3410 and LMG5200 power stages are in mass production. These devices can increase the density of your power supply and be designed at cost parity. By switching at higher frequencies than that is possible with MOSFETs, the power needed in filter components can be reduced in size and cost.
To watch the presentation, click here.
Product Spotlight
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Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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