Designing reliable and high density power solutions with GaN
In this two part series, Paul Brohlin, GaN power development engineer in Texas Instruments, discusses how to design reliable and high density power solutions with TI's GaNPower Stages. In the first section, he explains the advantages of GaN in power supplier performance and the advantages of TI integration of the driver and protection into a GaN Power Stage.
In this two part presentation, he also discusses the advantages of GaN over Silicon super junction MOSFETs, the advantages of TI's integrated power stage over discrete GaN devices, and will show some example applications that demonstrate the performance advantages of GaN. Relevant TI GaN parts for this session are the LMG3410 and 3411 families of 600 volt GaNPower Stages and the LMG5200 80 volt GaN half bridge power stage.
To watch the video, click here.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
