Dual channel MOSFETs simplify synchronous buck design
Advanced Power Electronics have today announced a new asymmetric-dual N-channel enhancement mode power MOSFET, the AP6950GYT. Intended for synchronous buck DC-DC converter power designs, the AP6950GYT is packaged in a small 3mm square PMPAK 3x3.
Encompassing a “high-side” control MOSFET (CH-1) and a “low-side” synchronous MOSFET (CH-2), the AP6950GYT offers a compact solution optimised for synchronous buck applications.
The new AP6950GYT power MOSFET features a low on-resistance of 18mΩ (CH-1) and 10.5mΩ (CH-2), while Drain-Source breakdown voltage for both channels is 30V.
“Our MOSFETs provide the designer with cost-effective performance whilst retaining the best combination of fast switching, ruggedized device design, and low on resistance,” commented Ralph Waggitt, President/CEO of Advanced Power Electronics (USA).
AP68950GYT power MOSFET key features:
- Simple drive requirement
- Easy for synchronous buck converter application
- RoHS compliant & halogen-free
- Small 3mm square PMPAK 3x3 package
- Low on-resistance of 18mΩ (CH-1) and 10.5mΩ (CH-2)
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