A smaller and faster IPM with CIP topology
The launch of a new, deeply integrated Intelligent Power Module for 600V applications has been announced by Vincotech, a supplier of module-based solutions for power electronics. The flowIPM 1B CIP 600 V features the powerful combination of a high-speed F5 IGBT with the switching performance of a MOSFET and a silicon carbide boost diode in the PFC circuit optimised for frequencies up to 150kHz.
High-speed F5 IGBT, paired with the silicon carbide boost diode in the PFC circuit, not only delivers impressive performance, it also drives down the cost of external passive components. The current rating of this new CIP (Converter + Inverter + Power factor correction) topology housed in an integrated power module is also impressive with a 10A at 80°C heat sink temperature.
The deeply integrated flowIPM 1B CIP 600V module enables manufacturers to slash their overall system's size, cost, and time to market. It also features an inverter gate drive with a bootstrap circuit for high-side power supply, as well as emitter shunts (30mΩ) for vastly improved motion control.
This new flowIPM 1B CIP 600V module comes in 17mm flow 1B housings. Versions in the 12mm housing, with press-fit pins and with phase-change material are available on request. Samples may be sourced on demand from our usual channels.
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APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
