8Gb device increases power efficiency for storage systems

Posted By : Daisy Stapley-Bunten
8Gb device increases power efficiency for storage systems

Alliance Memory has introduced a  monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8Gb density in the 78-ball, 9x13.2mm, lead (Pb)-free FBGA package. Delivering increased power efficiency for high-end computer and storage systems, the 1G x 8 AS4C1G8MD3L offers a double data rate architecture for extremely fast transfer rates of up to 1,600Mbps/pin and clock rates of 800MHz.

The AS4C1G8MD3L's transfer rates are twice as high as DDR and DDR2 SDRAMs, providing higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom, and aerospace applications. The 8GB DDR3L SDRAM operates from a single +1.35V power supply and is backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The device is a logical choice for customers that require increased memory yet face board space constraints.

The AS4C1G8MD3L is available with an extended commercial temperature range of 0 to +95°C (AS4C1G8MD3L-12BCN). Internally configured as eight banks of 1Gx8 bits, the DDR3L SDRAM features a fast 64ms, 8192-cycle refresh from 0 to +85°C and 32ms from +85 to +95°C.

The device released today offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.

In addition to the 1Gx8 AS4C1G8MD3L, Alliance Memory also offers the 512Mx16 AS4C512M16D3L in the 96-ball FBGA package, which is available in an extended commercial temperature range (AS4C512M16D3L-12BCN) and an industrial temperature range from -40 to +95°C (AS4C512M16D3L-12BIN). Alliance Memory is one of the few suppliers of monolithic DDR3L SDRAMs with high densities to 8Gb. In addition, with minimal die shrinks, the single-die AS4C1G8MD3L provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions — eliminating the need for costly redesigns and part requalification.

Samples and production quantities of the new 8-GB DDR3L SDRAM are available now, with lead times of six to eight weeks. 

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