60V MOSFET offers on-resistance down to 1.7mΩ
A 60V TrenchFET Gen IV n-channel power MOSFET in the 6.15mm by 5.15mm PowerPAK SO-8 single package has been introduced by Vishay Intertechnology. Designed to increase the efficiency of power conversion topologies, the Vishay Siliconix SiR626DP offers 36% lower on-resistance than previous-generation devices while delivering the low gate charge and output charge.
The device combines a maximum on-resistance down to 1.7mΩ at 10V with ultra low gate charge of 52nC, output charge of 68nC, and COSS of 992pF. The resulting gate charge times on-resistance and output charge times on-resistance — key figures of merit (FOM) for MOSFETs used in power conversion applications — are 32% and 45% lower, respectively, that previous-generation devices. The MOSFET's COSS is 69% lower.
Improved specifications are fine-tuned to minimise conduction and switching losses.
The result is increased efficiency for synchronous rectification in AC/DC topologies; primary- and secondary-side switching in isolated DC/DC topologies for solar micro-inverters and telecom, server, and medical equipment power supplies; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples of the SiR626DP are available now.
Production quantities are available with lead times of 30 weeks subject to market conditions.
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