With a footprint measuring 1.6x1.6mm and a typical height of 0.5mm, Diodes Incorporated has introduced what they claim to be the world’s smallest 60V N-channel power MOSFET with an on-resistance of less than 100mΩ. The DMN6070SFCL helps achieve higher power densities in space-critical products, such as cellphones, ultra-thin LCD TVs and hand-held gaming controls.
With its very low on-resistance of only 74mΩ typical at a VGS of 4V, the MOSFET also helps to minimise conduction losses and raise overall power efficiency. The DMN6070SFCL handles a continuous current of 2A and supports a pulsed current of 10A, enabling it to cope well with DC-DC conversion spikes.
The miniature DFN1616-packaged MOSFET is just one of a series of 60V N- and P-channel devices announced by Diodes Incorporated to meet the needs of load switch, DC-DC conversion and signal switching duties. Four larger package options are also offered: SO8, SOT23, SOT223 and TO252, suiting a wide range of applications including consumer electronics, industrial controls and HVAC equipment.
The DFN1616-packaged DMN6070SFCL 60V N-channel MOSFET is priced at $0.15 (USD) each in 10,000 unit quantities.