600V GaN cascode transistors provide efficiency & power density
ON Semiconductor and Transphorm have announced the NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600V GaN cascode transistors and a 240W reference design that utilises them. With typical RDS(ON) values of 150 and 290mΩ, the products are offered in a TO-220 package for easy integration with existing PCB manufacturing capabilities. Both products have been qualified to JEDEC standards and are in mass production.
The NCP1397GANGEVB (TDPS250E2D2) evaluation board is offered as a complete reference design for customers to implement and evaluate GaN cascode transistors in their power designs. The evaluation board offers customers a smaller footprint and better efficiency than power supplies using traditional devices. The boost stage delivers 98% efficiency and utilises the NCP1654 PFC controller. The LLC DC-DC stage uses NCP1397 resonant mode controller to offer 97% full load efficiency. This performance is achieved while running at over 200kHz and also meets EN55022 Class B EMC performance. Full documentation is available at the ON Semiconductor web site.
“GaN transistors offer a performance leap for switching power supplies and other applications where efficiency and power density are critical,” said Paul Leonard, Vice President and General Manager, Power Discrete Division, ON Semiconductor. “As more engineers become familiar with the benefits of gallium nitride devices, the demand for GaN-based products will rapidly increase. ON Semiconductor and Transphorm are working to be at the forefront of development and accelerate widespread adoption in the marketplace.”
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