Infineon Technologies has introduced the IRS2007S 200 V half-bridge gate driver IC in a standard SOIC-8 (DSO-8) package. It is a new member of the EiceDRIVER 200V level-shift gate driver family. Featuring undervoltage-lockout (UVLO) for VCC and VBS, the new gate driver ensures a higher reliability in start-up operations than previous product generations.
IRS2007S is tailored for low voltage (24V, 36V, and 48V) and medium voltage (60V, 80V, 100V, and 120V) motor control applications in battery driven devices. They are typically found in power tools, household and garden equipment, as well as in light electric vehicles such as e-bikes and e-scooters, and in e-toys like drones.
The new IRS2007S includes integrated dead-time and shoot-through protection. It also features low quiescent currents, tolerance of negative transient voltage and dV/dt immunity.
Therefore, the gate driver ensures the device reliability and reduces the BOM. Similar to other members of the 200V level-shift gate driver family, IRS2007S also utilises Infineon’s advanced high-voltage IC technology to realise a compact, efficient and robust monolithic construction. A smaller MLPQ 4x4 14L (VQFN-14) package option is also available in the family.
The 200V level-shift gate driver family comprises three-phase, half-bridge, and high and low side gate driver ICs, in both, Silicon-on-Insulator (SOI) and Junction Isolation (JI) options.
The three-phase gate driver ICs utilise Infineon’s SOI technology to provide functional isolation with industry leading negative VS robustness and reduced level shift losses. Additionally, the SOI solution comes with integrated bootstrap diodes (BSD) to further reduce overall cost, simplify layout, and reduce PCB size.