Power

2-in-1 MOSFETs contribute to reduced power losses

5th May 2016
Nat Bowers
0
Datasheets

Featuring excellent heat dissipation and low drain-source ON-resistance (typical RDS(ON) of 25mΩ at N-ch VGS=4.5V), two 2-in-1 MOSFETs have been unveiled by Toshiba Electronics Europe. The SSM6L61NU and SSM6N61NU, housed in compact SOT-1118 (UDFN6) packages, are suitable for use as power management switches and DC/DC converters in a variety of mobile devices, including smartphones and tablets.

The SSM6L61NU and SSM6N61NU can also be used in battery management applications and for load switching in applications with USB Type-C interfaces.

The MOSFETs contribute to reduced power loss in power supplies and extend the operation time of battery-driven devices. The SSM6L61NU is a complementary device and the SSM6N61NU is a dual N-ch device. When used in applications with USB Type-C interfaces the SSM6L61NU and SSM6N61NU can be placed between the output voltage from the PMIC and SoC, or in other parts of the circuitry.

A small package, measuring just 2x2mm, improves the power dissipation rating (PD=1W) and reduces the footprint of the MOSFETs by 50%, compared with those housed in a PS-8 package.

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