1200V IGBT6 discrete produced on 12" wafer

Posted By : Alex Lynn
1200V IGBT6 discrete produced on 12" wafer

It has been announced that Infineon Technologies is launching a new 1200V IGBT generation TRENCHSTOP IGBT6, an IGBT duopack manufactured on 12" wafer size. The new IGBT technology is designed to fulfil the increasing customer requirements for high efficiency and high power density.

The product family was optimised for use in hard switching and resonant topologies operating at switching frequencies from 15kHz to 40kHz. Typical applications for the IGBT6 are uninterruptible power supply (UPS), solar inverters, battery chargers, and energy storage.

The 1200V TRENCHSTOP IGBT6 is releasing in two families. The S6 series features the best trade-off between a low saturation voltage and low switching losses. The H6 series is optimised for low switching losses. Application tests reportedly confirmed that the direct replacement of the predecessor Highspeed3 IGBT with the new IGBT6 S6 series translates into 0.2% efficiency improvement.

The positive temperature coefficient allows easy and reliable device parallelling. Additionally, the very good R g controllability permits adjusting the switching speed of the IGBT to the requirements of the respective application.

The 1200V TRENCHSTOP IGBT6 families are in volume production. The product portfolio comprises 15 and 40A co-packed with a half or full rated freewheeling diode in a TO-247-3 package. A current density for a discrete IGBT is delivered by the 75A variant co-packed with a 75A freewheeling diode in TO-247PLUS 3pin or 4pin package.


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