10kW 3-phase 3-level grid tie inverter reference design

14th September 2018
Posted By : Enaie Azambuja
10kW 3-phase 3-level grid tie inverter reference design

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC/AC grid-tie inverter stage. Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99%. This design is configurable to work as a two-level or three-level inverter.

Features

  • Rated nominal/max input voltage at 800V/1000VDC
  • Max 10kW/10KVA output power at 400VAC 50/60Hz grid-tie connection
  • Operating power factor range from 0.7lag to 0.7lead
  • High voltage (1200V) SiCMosFET based full bridge inverter for peak efficiency of 99%
  • <2% output current THD at full load
  • Isolated current sensing using AMC1301 for load current monitoring
  • Isolated driver ISO5852S with reinforced isolation for driving High voltage SiC MOSFET and UCC5320S for driving middle Si IGBT

Discover more here.


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

European Microwave Week 2018
23rd September 2018
Spain Ifema Feria De Madrid
Connected World Summit 2018
25th September 2018
United Kingdom Printworks, London
IoT Solutions World Congress 2018
16th October 2018
Spain Barcelona
Engineering Design Show 2018
17th October 2018
United Kingdom Ricoh Arena, Coventry
Maintec 2018
6th November 2018
United Kingdom NEC, Birmingham