Pending
IGBT/MOSFET gate drive optocouplers with 2.0 A output current
NEC Electronics has introduced the first product in a new series of IGBT/MOSFET gate drive optocouplers. The PS9552 consists of a GaAlAs LED on the input side and a photo diode with signal processing circuit and power stage on the output side. It is a combination of a fast optocoupler providing galvanic isolation and an IGBT/MOSFET driver supplying high output voltage and current. The design features common mode transient immunity of at least 15 kV/µs, output current of at least 2 A and high switching speed (tPHL/tPLH = 0.5 µs max.).
The plastic DIP package provides highest safety characteristics, such as 8 mm creepage distance, > 0.4mm isolation distance and 5000 VRMS isolation voltage, and complies with common international safety standards (eg, UL, VDE 0884, CSA, BSI).The PS9552 optocoupler is ideal for industrial inverter and motor control applications where a microcontroller unit needs to be electrically isolated from the high power inverter side. The wide application range includes frequency converters, AC drives, brushless DC drives, industrial inverters, uninterruptable power supplies and induction heaters. It can drive IGBTs supplying up to 1200 V and 100 A.
Product Spotlight
APV1111GVY
Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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| Stock: | 3490 |
| Cost: | $3.95 |
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