Ultrafast diodes designed for use as anti-parallel diodes

The devices are designed for use as anti-parallel diodes in combination with Vishay's Trench IGBTs, while their extremely soft turn-off behaviour minimises overvoltages under all switching conditions. Together, the Ultrafast diodes and IGBTs provide low EMI and plug-and-play reliability for single- and three-phase inverters, as well as full- and half-bridge DC/DC converters. The 'H' and 'U' series devices can also be used as stand-alone components for PFC circuits, boosters, choppers and secondary-side rectification.

Designed to minimise conduction losses in medium-speed circuits, the 'U' series diodes feature extremely low forward voltage down to 1.4V for 600V devices and 1.48V for 650V devices. Optimised to deliver high speeds for higher-frequency applications, the 'H' series diodes offer reverse recovery times down to 25ns with low typical forward voltages down to 1.65V for 600V devices and 1.74V for 650V devices.

The Gen 4 diodes feature improved technologies in their active area and termination design - allowing for forward currents ranging from 12 to 250A in smaller die sizes than previous-generation devices - while their reduced thickness improves thermal impedance. For high reliability, the polyimide passivated diodes offer a high operating temperature to +175°C.

Samples and production quantities of the Gen 4 Ultrasoft recovery diodes are available now, with lead times of eight weeks for large orders.