Passives

Bias diode features low leakage current of less than 0.01µA

14th November 2014
Siobhan O'Gorman
0

 

The VESD15A1-HD1-G4-08, a BiAs single-line ESD protection diode for portable electronics which provides a reverse avalanche breakdown voltage above 15.5V in an ultra-compact LLP1006-2L package, has been released by Vishay Intertechnology.

With a small 1.0x0.6mm footprint and a low profile of less than 0.4mm, the VESD15A1-HD1-G4-08 is designed to reduce the board space required for ESD protection in smartphones, tablets, gaming systems and MP3 players. For these devices, the diode offers a high isolation to ground characterised by a low leakage current of less than 0.01µA and low load capacitance of 45pF at 0V.  

Any transient voltage signal exceeding the reverse breakdown voltage of 15.5V minimum will be clamped and shorted to ground. Negative transient voltage signals drive the diode in the forward direction and are also clamped close below the ground level. The device features maximum reverse and forward clamping voltages of 20 and 1.3V at 1A, respectively.  

The VESD15A1-HD1-G4-08 provides transient protection for one data line as per IEC 61000 4 2 at ±30kV (air and contact discharge), and high surge current protection according to IEC 61000-4-5 greater than 6A. The device offers a MSL of 1 in accordance to J-STD-020, a UL 94 V-0 flammability rating and NiPdAu (e4) pin plating to prevent whisker growth. The protection diode is RoHS-compliant, halogen-free, and Vishay GREEN. Soldering can be checked by standard vision inspection, with no x-ray necessary.

Samples of the VESD15A1-HD1-G4-08 is available now. Mass production is supported with lead times of eight weeks for large orders.

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