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Power Newsletter
Power
3rd September 2021
Diodes Incorporated introduce the PI3EQX12902E/PI3EQX12904E
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Diodes Incorporated have introduced the PI3EQX12902E/PI3EQX12904E to further strengthen its ReDriver product offering. These ReDrivers meet the modern standby mode requirements as outlined by Microsoft Corporation, and deliver elevated linearity and low jitter characteristics now expected in laptop, notebook, industrial PC, and embedded system designs.
Power
3rd September 2021
STMicroelectronics: Single-chip GaN Gate Driver
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STMicroelectronics’ STDRIVEG600 half-bridge gate driver has high current output and 45ns propagation delay, closely matched between high-side and low-side outputs, to handle high-frequency switching of GaN enhancement-mode FETs.
Power
3rd September 2021
THR Series: Reinforced isolated DC/DC converters with 3000 VAC isolation voltage
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The THR line comprises four series of DC/DC converters between 3 and 40watt with reinforced isolation (3000 VAC). These regulated DC/DC converters come in either a DIP-24 or 2”x1” package and also feature increased resistance against shock and vibration according to EN 61373. The THR 3WI, THR 10WI and THR 20WI also have an internal input filter to comply with EN 55032 class A. Efficiencies up to 90% allow safe operation from –40°C to +80°C (with derating).
Power
3rd September 2021
GaN Systems have added two transistors to their portfolio
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GaN Systems have introduced two transistors into the portfolio of GaN power transistors. The transistors are packaged in a standard 8×8 mm PDFN package.
Power
3rd September 2021
Infineon and Panasonic accelerate GaN technology development
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Infineon and Panasonic have signed an agreement for the joint development and production of the second generation (Gen2) of their gallium nitride (GaN) technology, claiming to offer higher efficiency and power density levels. The performance and reliability combined with the capability of 8-inch GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements, Gen2 will be developed as 650 V GaN HEMT. The devices will allow for ease of use and provide an improved price-performance ratio, targeting, amongst others, high- and low-power SMPS applications, renewables, motor drive applications.
Power
3rd September 2021
Driving high-power Class-D audio to new heights
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Class-D audio high-power amplifiers have succeeded in professional and high-end consumer markets by offering a combination of small size, low heat dissipation, high integration, and good sound. Efficiency is considered a strong point of the class-D topology; which could be the key to eliminating the bulky heatsinks needed by traditional analog amplifiers, thus permitting smaller, more lightweight solutions. Their smaller size delivers practical benefits, expanding styling opportunities, permitting new generations of equipment better suited to home use and small studios, and allowing more channels to be integrated into a single unit.     
Power
3rd September 2021
Power system managers offer four channel options
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In stock at distributor Anglia Components is Analog Devices’ LTC2971 series of two-Channel ±60V Power System Managers (PSM).
Power
3rd September 2021
Thin-film batteries drive 1.5 V or 3.0 V
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Disposable thin-film batteries from Molex have been added to the global portfolio of authorised distributor Heilind Electronics.
Sponsored
3rd September 2021
Open-loop LLC transformer driver for isolated bias supplies
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The UCC25800-Q1 open-loop LLC transformer driver integrates the switching power stage, the control, and the protection circuits to simplify isolated bias supply designs. The LLC topology allows the design to utilize a transformer with higher leakage inductance, but much smaller parasitic primary-to-secondary capacitance.
Sponsored
3rd September 2021
200-mA, nanopower-IQ (25 nA), low-dropout (LDO) voltage regulator with enable
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The TPS7A02 is an ultra-small, ultra-low quiescent current low-dropout linear regulator (LDO) that can source 200 mA with excellent transient performance. The TPS7A02, with an ultra-low IQ of 25 nA, is designed specifically for applications where very-low quiescent current is a critical parameter. This device maintains low IQ consumption even in dropout mode to further increase the battery life.
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