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CMOS SDRAMs and mobile SDRAMs to be exhibited at electronica

12th September 2014
Siobhan O'Gorman

High-speed CMOS SDRAMs and mobile low-power DDR, DDR2 and DDR3 SDRAMs, which feature a wide range of densities, configurations, package options and temperature ratings, are to be exhibited at electronica 2014 in Hall A5, Booth 224. The drop-in, pin-for-pin-compatible devices, manufactured by Alliance Memory, are suitable for use products requiring high memory bandwidth.

Industrial, medical, communications, telecomms and PC applications are among those in which the devices are suitable for. Featuring programmable read or write burst lengths, all of the devices are lead (Pb)- and halogen-free. Initiated at the end of the burst sequence, an auto pre-charge function provides a self-timed row. The devices also feature auto or self-refresh functions and a programmable mode register, allowing the system to choose modes which will maximise performance.

Designed to increase efficiency and extend battery life in compact portable devices, Alliance Memory's mobile low-power DDRs feature a power consumption from 1.7-1.95V. Available in 256Mb, 512Mb, 1Gb and 2Gb, the devices are offered in 8x9mm 60 ball and 8x13mm 90 ball FPBGA packages.

The high-speed CMOS DDR3 SDRAMs, which are available 78-ball and 96-ball FBGA packages, are offered in 1, 2, and 4Gb. Available in commercial (0 to +85°C), industrial (-40 to +95°C), and automotive (-40 to +105°C) temperature ranges, the devices are widely applicable. The devices also feature a synchronous interface and are offered in 128M x 8, 256M x 8, 512M x 8, 64M x 16, 128M x 16 and 256M x 16 configurations. Featuring a clock rate of 1600MHz, the devices operate from a single +1.5V power supply.

Offered in 64, 128, 256 and 512Mb, the DDR SDRAMs operate within an industrial temperature range of -40 to +85°C. With a synchronous interface, the devices are internally configured as four banks of 1M, 2M, 4M, or 8M words x 16-bits. The devices, which operate from a single +2.5V (±0.2V) power supply, feature a clock rate of 200MHz. The devices are available in the 66-pin TSOP II package with a 0.65mm pin pitch.

The DDR2 SDRAMs, which are offered in 512Mb and 1Gb, can be internally configured as four banks of 8M words x 16-bits and eight banks of 8M x 16-bits and 16M x 8-bits. Available in 60-ball 8x10x1.2mm and 84-ball 8x12.5x1.2mm FBGA packages, the devices feature a synchronous interface and a clock rate of 400MHz and data rate of 800Mbps/pin. The devices operate from a single +1.8V (±0.1V) power supply and are offered in commercial (0 to +85°C), industrial (-40 to +95°C), and automotive (-40 to +105°C) temperature ranges.

Available in 64, 128 and 256M, the CMOS synchronous SDRAMs are offered with x32 devices in the 90-ball 8x13x1.2mm TFBGA and 86-pin 0.4" plastic TSOP II packages. The 2M x 32, 4M x 32 and 8M x 32 devices, which operate from a single +3.3V (±0.3V) power supply, feature fast access time from clock down to 5.4ns. A commercial temperature range of 0 to +70°C and clock rate of 133MHz are offered by the 256M SDRAMs, while an industrial temperature range from -40 to +85°C and a higher clock rate of 166MHz are offered by the the 64 and 128M devices.

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