Cree to speak at APEC conference

Cree will have several onsite demos designed to illustrate the broad range of power levels,from Watts to MegaWatts, that SiC can support. Demos will include an SiC-based LED power supply (less than 500W); a ZVS resonant converter targeted for telecomms applications (1–10kW); a 25kW boost converter for solar applications that features a compact, 31mm Cree module (10–25kW); and a power stack that demonstrates how Cree’s 1.2kV, 300A SiC modules can revitalise older IGBT-module-based systems (100kW to 1MW).

Cree will also showcase its latest SiC evaluation board, which enables the high frequency characterisation of SiC MOSFETs and diodes. A new reference design for an extremely lightweight (less than 25kg), high power density 50kW solar inverter based on the latest Cree SiC modules and capable of achieving 99% efficiency will also be shown.

On 15th March, Marcelo Schupbach, John Mookken, Gangyao Wang, and Edgar Ayerbe of Cree will present Design Considerations for Achieving Robust and Reliable Power Designs Based on Silicon Carbide Power Modules and Discrete Devices during the WBG Devices and Applications portion of the professional education seminar at 2:30–6:00pm.

On 16th March, David Cox of Cree will present the plenary session, Power Architectures for the Next Generation of Solid-State Lighting, from 2:00–2:30pm. Lastly, on 19th March, Edgar Ayerbe will present Potential System Benefits of Silicon Carbide in Medical Imaging Applications during Industry Session 14: Wide Bandgap Semiconductors, which will take place from 2:00 to 5:25pm.