1,200V SiC Schottky diodes introduced at PCIM 2017

Activities at this year’s exhibition, organised under the theme of 'Speed. Agility. Flexibility. The Future of Power Semiconductor. Today.' included in-booth demonstrations of upcoming technology platforms for products nearing introduction.

"PCIM Europe 2017 gave us a great opportunity to spread the message that silicon carbide products are now available and affordable to more power converter designers than ever before," said Ian Highley, Senior Vice President and General Manager, Semiconductor Products and Chief Technology Officer for Littelfuse. "We look forward to working closely with these designers to bring their products to market as quickly as possible."

Littelfuse power semiconductor experts presented a series of short TechTalks in the show booth addressing issues related to power semiconductors, particularly the challenges associated with integrating SiC devices into power converter designs. Several subject matter experts also made presentations that demonstrate Littelfuse customer-friendly expertise and thought leadership in the field of power semiconductors:

• Unleash SiC MOSFETs – Extract the Best Performance
• Fabricating Rugged 1.2KV SiC MOSFETs in a High Volume 150mm CMOS Fab
• Solutions for a Safer E-Mobility
• System Level Comparison of SiC IGBTs and SiC MOSFETs
• Characterisation and Optimisation of SiC Freewheeling Diode for Switching Losses Minimisation Over Wide Temperature Range
• SiC MOSFETs – How Can We Match the Success of SiC Diodes?

Littelfuse will also be releasing its competitive 1,200V MOSFET platforms later this year, including systems-level applications support, with ongoing development of platforms for other key device classes.