High-speed DRAMs save on board space

2nd September 2015
Posted By : Mick Elliott
High-speed DRAMs save on board space

A range of synchronous DRAMs from Alliance Memory featuring state-of-the-art silicon from Micron Technology is in stock at Solid State Supplies. The devices are a high-speed, low-voltage 8-Gbit DDR3L SDRAM (Double Data Rate 3 synchronous DRAM) memory and three 512-Mbit SDRAM chips that are 100% equivalent to discontinued memory ICs from Micron.

Ideal for applications that demand high-density memory but have strict constraints on board space, the AS4C512M16D3L 8-Gbit SDRAM comes in a 96-ball lead (Pb)-free FBGA package with dimensions of 9 x 14mm. The device is internally configured as eight banks of 512M x 16 bits and offers extremely fast transfer rates of up to 1600-Mbps/pin and clock rates of 800MHz.

Eliminating the need for costly redesigns and part requalification, the memory provides a reliable drop-in pin-for-pin-compatible replacement for a number of similar devices used with the latest-generation microprocessors in a range of applications in industrial, medical, networking, telecom and aerospace markets.

The AS4C512M16D3L offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.

Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.

The device operates from a single +1.35V power supply and is available in the commercial temperature range of 0 to +95°C (AS4C512M16D3L-12BCN) and the industrial range of –40 to +95°C (AS4C512M16D3L-12BIN).

Also available from Solid State Supplies are three 512M SDRAM devices that have been discontinued by Micron Technology. These SDRAMs continue to be manufactured by Micron but are supplied via Alliance Memory as part of an extended availability agreement between the two companies.

The devices are the 32Mx16 Micron part number MT48LC32M16A2P-75:C (Alliance part number AS4C32M16SM-7TCN – commercial temperature range), the 32Mx16 Micron part number MT48LC32M16A2P-75 IT:C (Alliance part number AS4C32M16SM-7TIN –industrial temperature range) and the 64M x 8 Micron part number MT48LC64M8A2P-75:C.

Devices with the Alliance Memory part numbers are 100% equivalent to the corresponding Micron part, and each device has been manufactured in the same wafer/assembly and test materials and silicon process technology.

Optimised for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, as well as high-performance PC applications, the SDRAMs are offered in 54-pin TSOP II packages, operate from single +3.3V (±0.3 V) power supplies and are lead (Pb) and halogen free.

PC100- and PC133-compliant, the three SDRAMs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximise performance.

Samples of all four devices are now available from Solid State Supplies.

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