CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

15th July 2015
Posted By : Siobhan O'Gorman
CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

A monolithic high-speed, low-voltage CMOS DDR3L SDRAM with an 8Gb density in a 96-ball, 9x14mm, lead (Pb)-free FBGA package has been released by Alliance Memory. Featuring silicon provided by Micron Technology, the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600Mbps/pin and clock rates of 800MHz.

With minimal die shrinks, the single-die 8Gb DDR3L SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation MPUs for industrial, medical, networking, telecomms and aerospace applications, eliminating the need for costly redesigns and part requalification. This 8Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.

The AS4C512M16D3L operates from a single +1.35V power supply and is available with a commercial temperature range of 0 to +95°C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 to +95°C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16-bits.

The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.

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