CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

15th July 2015
Posted By : Siobhan O'Gorman
CMOS DDR3L SDRAM offers a 8Gb density in a 96-ball package

A monolithic high-speed, low-voltage CMOS DDR3L SDRAM with an 8Gb density in a 96-ball, 9x14mm, lead (Pb)-free FBGA package has been released by Alliance Memory. Featuring silicon provided by Micron Technology, the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600Mbps/pin and clock rates of 800MHz.

With minimal die shrinks, the single-die 8Gb DDR3L SDRAM provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation MPUs for industrial, medical, networking, telecomms and aerospace applications, eliminating the need for costly redesigns and part requalification. This 8Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.

The AS4C512M16D3L operates from a single +1.35V power supply and is available with a commercial temperature range of 0 to +95°C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 to +95°C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16-bits.

The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

SPS IPC Drives 2019
26th November 2019
Germany Nuremberg Messe
Vietnam International Defense & Security Exhibition 2020
4th March 2020
Vietnam National Convention Center, Hanoi