Memory
Fastest SSD flash drive has performance of 10 GB/s
Seagate Technology today unveiled a production-ready unit of the fastest single SSD demonstrated to date, with throughput performance of 10 GB/s. The early unit meets OCP specifications, making it ideal for hyperscale data centers looking to adopt the fastest flash technology with the latest and most sustainable standards. The 10GB/s unit, which is expected to be released this summer, is more than 4GB/s faster than the previous fastest-indus...
The industry’s first complete UVM SystemVerilog VIP library
Mentor Graphics has announced the first entirely native UVM SystemVerilog memory VIP (Verification IP) library for all commonly used memory devices, configurations and interfaces. Mentor is adding more than 1,600 memory models to the Mentor VIP library that already supports over 60 commonly used peripheral interfaces and bus architectures.
'Bending current' to introduce energy-efficient memory
Use your computer without the need to start it up: a new type of magnetic memory makes it possible. This 'MRAM' is faster, more efficient and robust than other kinds of data storage. However, switching bits still requires too much electrical power to make large-scale application practicable. Researchers at Eindhoven University of Technology (TU/e) have discovered a smart way of solving this problem by using a 'bending current'. They publish their...
6.0 Gbit/s SATA SSD suits value-endurance workloads
Toshiba Electronics Europe (TEE) announces the HK4, a new enterprise 6.0 Gbit/s SATA SSD series designed for read-intensive and value-endurance workloads. The HK4 Series is Toshiba’s first SSD for enterprise and data centre applications to embed 15nm MLC NAND flash memory and offers low latency tuned for high Quality of Service (QoS).
Quad SPI FRAM device features 4Mb capacity
Fujitsu is launching the 'industry’s first' Quad SPI FRAM product MB85RQ4ML, offering an ultra high speed and compact nonvolatile memory solution for networking, industry computing and HMI applications. MB85RQ4ML incorporates 4Mbit FRAM (Ferroelectric Random Access Memory) and Quad SPI interface.
High capacity SSD embeds TLC NAND Flash memory
Toshiba Electronics Europe has introduced a client Solid State Drive (cSSD) with embedded TLC NAND flash memory. The SG5 series provides high performance and large storage capacities while maintaining a small form factor and reducing costs for consumers.
USB 3.1 Flash memory controller enhances endurance
Hyperstone introduces its USB 3.1 Flash memory controller, U9. U9 is targeting industrial applications such as removable USB Flash drives (UFD) and embedded USB Flash modules (eUSB). Together with Hyperstone's hyMap Flash Translation Layer (FTL) and hyReliabilityT firmware features, U9 provides enhanced endurance and data retention management, as well as rigorous power fail-safe features.
Add flash memory to automotive analogue devices
Renesas Electronics has announced the development of 90nm one-transistor MONOS (Metal-Oxide-Nitride-Oxide-Silicon) flash memory technology that can be used in combination with a variety of processes, such as CMOS and bipolar CMOS DMOS (BiCDMOS), and provides high Programme/Erase (P/E) endurance and low rewrite energy consumption.
New neural network based on polymeric memristors
Scientists from the Kurchatov Institute, MIPT, the University of Parma, Moscow State University, and Saint Petersburg State University have created a neural network based on polymeric memristors. According to the researchers, these developments will primarily help in creating systems for machine vision, hearing, and other sensory organs, and also intelligent control systems for various devices, including autonomous robots.
SD and Micro SD memory cards meet demanding applications
Thanks to the Swissbit firmware translation layer architecture (FTL) – claimed to be the world’s first implementation of a sub-page based firmware on SD cards – the new S-45 family offers several key features that cannot normally co-exist in one SD/Micro SD card: cost competitiveness, extended endurance, increased retention time, elimination of read disturb and high sustained random write performance for small data size operatio...