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ISi Announces Silicon Validation of Z-RAM Technology

Innovative Silicon Inc. (ISi), the developer of Z-RAM™ high density memory IP, has announced that it has achieved silicon validation of Z-RAM memory arrays on 90nm SOI process technologies. The company also announced that it has validated its memory bitcell (which requires only one transistor and zero capacitors) in an additional 10 fabrication processes that include 130nm SOI, 90nm SOI, and FinFET technologies. The company expects to demonstrate working silicon in multiple 65nm processes later this quarter.
23rd January 2006

Zero capacitor memory technology proved realisable on FinFET/TriGate device geometries

In a paper given by Innovative Silicon Inc. (ISi) at the recent IEEE SOI Conference, the company claims to prove the manufacturability of its Z-RAM (zero capacitor) embedded memory technology in FinFET and TriGate devices with geometries below 45nm.
19th January 2006

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