Memory
A new record for magnetic tape storage
Research scientists have achieved a new world record in tape storage – their fifth since 2006. The new record of 201 Gb/in2 in areal density was achieved on a prototype sputtered magnetic tape developed by Sony Storage Media Solutions. The scientists presented the achievement today at the 28th Magnetic Recording Conference (TMRC 2017) here.
Storage solutions for networks in the era of the IIoT
Manufacturer of flash memory solutions, Swissbit, will be exhibiting its latest memory innovations at the Flash Memory Summit 2017 in Santa Clara, California (8-10th August, 2017).
Nanoscale magnetic excitations that can store data
Magnets and magnetic phenomena underpin the vast majority of modern data storage, and the measurement scales for research focused on magnetic behaviors continue to shrink with the rest of digital technology. Skyrmions, for example, are a kind of nanomagnet, composed of a spin-correlated ensemble of electrons acting as a topological magnet on certain microscopic surfaces. The precise properties, like spin orientation, of such nanomagnets can store...
Apacer launches NVMe PCIe SSD
In response to consumer needs for faster big data processing and real-time computing, Apacer Technology has launched the industrial-grade PM110-M280, a high-performance PCIe SSD suitable for cloud computing, IoT, and virtual environments. This enterprise SSD features a PCIe Gen3 x4 interface for faster transmission speeds and supports industry-leading NVMe, greatly improving IOPS and low latency performance and pushing through the bottleneck of p...
World’s first 3D flash memory comes with TSV technology
Toshiba Memory has announced development of the world’s first BiCS FLASH three-dimensional (3D) flash memory utilising Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this ground-breaking device will be showcased at the 2017 Flash Memory Sum...
Company reaches key industrial MLC flash memory milestone
Manufacturer of flash memory solutions, Swissbit, has reached a key milestone with its MLC technology durabit. In December 2016, for the first time, a third of all flash products sold by Swissbit were based on MLC (Multi Level Cell). At the same time, sales of SLC products (Single Level Cell) also increased, firmly establishing Swissbit as a leading provider of industrial flash memory products. Traditionally, demanding applications in indust...
SD-Speicher bieten intelligentes Design & robuste Bauweise
Nexus Industrial Memory hat in Zusammenarbeit mit Datakey kürzlich ein Whitepaper über die industrielle Nutzung von SD-Speicher verfasst, welches die wichtigsten Unterschiede zwischen den verfügbaren Lösungen betrachtet. Es wird erörtert, welche die sinnvollste Herangehensweise ist, um SD-Speicher unter besonders rauen und fordernden Umgebungsbedingungen einsetzen zu können und dabei häufig auftretende Probleme ...
Anti-vibration fill now available in RAM modules
Cervoz offers value-added technology, Anti-Vibration Fill, to enhance the robustness of their DRAM modules. The new technology is available exclusively from Display Solutions in the UK. In real-world industrial computing applications, embedded devices are installed in harsh environments with constant shock or vibrations. The RAM modules inside these devices may be vulnerable to these impacts, causing poor contact and connection.
3D chip merges computing with data storage
As embedded intelligence is finding its way into ever more areas of our lives, fields ranging from autonomous driving to personalised medicine are generating huge amounts of data. But just as the flood of data is reaching massive proportions, the ability of computer chips to process it into useful information is stalling. Now, researchers at Stanford University and MIT have built a new chip to overcome this hurdle.
3D flash memory adds layers and boosts capacity
A prototype sample of 96-layer BiCS FLASH three-dimensional (3D) flash memory with a stacked structure has been developed by Toshiba Memory, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for app...