High gain, ruggedness feature in power transistor
A 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications has been introduced by MACOM. This transistor is available in standard flange or earless flange packaging. The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metallised, internally matched, GaN on SiC depletion mode RF power transistor.
Operating in the 960 to 1215 MHz frequency range, the device is a rugged and robust transistor, boasting a mean time to failure (MTTF) of 600 years.
The internally matched MAGX-000912-650L0x features 650 W of peak output power with 20 dB typical gain and 62% drain efficiency. The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.
The device was developed using state of the art wafer fabrication processes, and provides customers with high gain, efficiency, bandwidth and ruggedness to meet today’s demanding application needs.
This transistor is optimised for civilian and military pulsed avionics amplifier applications in the 960 to 1215 MHz range, for Mode-S, TCAS, JTIDS, DME and TACAN operation.
It is RoHS Compliant and 260°C reflow compatible.
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| Stock: | 3490 |
| Cost: | $3.95 |
