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GaN Systems to showcase 650V, 100A GaNpower transistors

4th September 2015
Nat Bowers
0

GaN Systems will be displaying its GS66540C 650V, 100A GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 - ECCE Europe. Hosted by CERN in Geneva from 8th to 10th September, the conference and exhibition bring together leading industry figures in power electronics and experts from research and academic institutions to share knowledge and display cutting-edge developments in power technology.

On Booth 1 Level 0, visitors will be able to see GaN Systems’ GS66540C high current power devices on show for the first time. Part of the company’s family of 650V GaN power transistors based on its proprietary Island Technology, these high density devices achieve extremely efficient power conversion with fast switching speeds of less than 100V/nS and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets.

The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are now sampling with major customers, including OEMs and Tier 1 manufacturers and are being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage. Also on display at EPE’15, GaN systems will show multiple customer platforms, including an exciting 2kW commercial vehicle inverter from the leading global transportation technology company, Ricardo.

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