Platform integrates high performance 0.1um GaAs pHEMT

13th June 2018
Posted By : Enaie Azambuja
Platform integrates high performance 0.1um GaAs pHEMT

WIN Semiconductors has expanded its portfolio of highly integrated GaAs technologies with the release of a pHEMT technology. The PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10. This integrated technology, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600GHz, as well as multi-function PIN diodes while preserving the mmWave performance of the PP10 technology.

The availability of monolithic PIN and Schottky diodes with a high performance mmWave transistor enables on-chip integration of a wide range of functions, including mixers, temperature/power detecting, limiters, and high frequency switching, and supports power, low noise and optical applications through100GHz.

This integrated technology provides users with multiple pathways to add on-chip functionality and reduce the overall die count of complex multi-chip modules used in a variety of end-markets.

In addition to high frequency switching, the monolithic PIN diodes can be used for low parasitic capacitance ESD protection circuits, and as an on-chip power limiter to protect sensitive LNAs in phased array radars. The vertical Schottky diodes enable numerous detecting and mixing functions and can be combined with the PIN diodes in limiter applications.

"Today's complex systems and highly competitive markets require increased mmWave performance and more functionality per chip. The PIH0-03 platform is the latest example of how WIN Semiconductors is addressing these critical market needs by offering high performance GaAs technologies with new levels of multifunction integration."

"To meet the ever-increasing demands of next generation mobile user equipment, wireless infrastructure, fiber optics and military applications, WIN Semiconductors continues to commercialise advanced, highly integrated GaAs solutions and provide our customers a clear technology advantage," said David Danzilio, Senior Vice President of WIN Semiconductors Corp.

WIN Semiconductors will be showcasing its compound semiconductor RF and mm-Wave solutions in booth 415 at the 2018 International Microwave Symposium in Philadelphia, PA being held on 10th to 15th June, 2018.


You must be logged in to comment

Write a comment

No comments




Sign up to view our publications

Sign up

Sign up to view our downloads

Sign up

SINDEX 2018
28th August 2018
Switzerland BERNEXPO-Site, Bern
European Microwave Week 2018
23rd September 2018
Spain Ifema Feria De Madrid
Connected World Summit 2018
25th September 2018
United Kingdom Printworks, London
IoT Solutions World Congress 2018
16th October 2018
Spain Barcelona
Engineering Design Show 2018
17th October 2018
United Kingdom Ricoh Arena, Coventry