X-FAB has announced the availability of new high voltage primitive devices targeted at the growing market for automotive 48V board net and Battery Management System (BMS) ICs. Covering voltages of 70-125V, these complementary NMOS/PMOS devices are based on the company’s XT018 BCD-on-SOI platform with Deep Trench Isolation (DTI) and support for automotive AEC-Q100 Grade 0 products.

X-FAB Silicon Foundries continues to develop semiconductor solutions to address the most difficult of design challenges. It has now announced the availability of Avalanche Photodiode (APD) and Single-Photon Avalanche Diode (SPAD) products for implementation in scenarios where there are extremely low light conditions to contend with and augmented sensitivity is required, as well as tight timing resolutions involved.

Analog/mixed-signal and specialty foundry, X-FAB Silicon Foundries, together with crowd-sourcing IC platform partner Efabless Corporation, have announced the successful first-silicon availability of the Efabless RISC-V System on Chip (SoC) reference design. This open-source semiconductor project went from design start to tape-out in less than three months using the Efabless design flow based on open-source tools. 

Analog/mixed-signal and specialty foundry, X-FAB Silicon Foundries, has announced the full volume production release of its new high temperature galvanic isolation semiconductor process. This proprietary technology is fully automotive qualified, and offers greater reliability levels compared to options offered by the competition.

  X-FAB Silicon Foundries has announced plans to double their 6" Silicon Carbide (SiC) process capacity at its fab in Lubbock, Texas in response to increased customer demand for high efficiency power semiconductor devices.

The availability of a new galvanic isolation process technology that enables the fabrication of robust and reliable high voltage signal isolation solutions, has been announced by X-FAB Silicon Foundries. According to the company, the new process achieves best-in-class isolation performance. By leveraging it, X-FAB’s customers will be able to design their own capacitive or inductive couplers for a wide range of applications. ...

Analogue/mixed-signal and MEMS manufacturer, X-FAB Silicon Foundries, has announced that it is the first semiconductor foundry whose manufacturing sites are certified for automotive manufacturing according to the new IATF-16949:2016 International Automotive Quality Management System (QMS). The certification is acknowledged as the industry’s highest standard of system and process quality for automotive suppliers.

Two new Non-Volatile Memory (NVM) IP solutions have been announced by X-FAB - a low power embedded Flash (eFlash) IP block and a NVRAM compiler. Both are based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology and are targeted at applications requiring high reliability and field re-programmability while operating at low power and in harsh environments.

  Based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology, X-FAB has announced the expansion of its low-noise transistor portfolio. Three new transistors are now available: a 1.8V low-noise NMOS, a 3.3V low-noise NMOS and a 3.3V low-noise PMOS – all of which offer drastically reduced flicker noise compared to standard CMOS offerings.

 X-FAB Silicon Foundries and Exagan, a start-up innovator of gallium-nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, have demonstrated mass-production capability to manufacture highly efficient high-voltage power devices on 200-mm GaN-on-silicon wafers using X-FAB’s standard CMOS production facility in Dresden, Germany.

In order to drive further ingenuity in IC development, X-FAB Silicon Foundries and efabless have announced the launch of an open mixed-signal design challenge. The objective of this challenge is to give designers across the globe, of all levels of experience, the opportunity to deliver a completed design IP for an ultra-low power voltage reference. The IP will be developed in X-FAB’s 350nm mixed-signal process with designers being granted a...

Advancing semiconductor technology, X-FAB Silicon Foundries has reached another important milestone in the establishing of the world’s first semiconductor foundry to support 6-inch silicon carbide (SiC) production. The company, in collaboration with the U.S. Department of Energy (DOE) and the PowerAmerica Institute, has just deployed a high temperature implanter at its facility in Lubbock, Texas.

As a result of insolvency proceedings, X-FAB Silicon Foundries has announced that it will acquire the assets of Altis Semiconductor, a specialty stand alone foundry located in the Greater Paris area.

X-FAB MEMS Foundry has further underlined its ongoing commitment to delivering next gen micro-electro-mechanical system (MEMS) solutions to the medical sector by continuing its sponsorship of the Medical MEMS & Sensors conference in Santa Clara.

X-FAB Silicon Foundries is putting itself at the vanguard of wide-bandgap semiconductor production by announcing the availability of its silicon carbide (SiC) offering from its wafer fab in Lubbock, Texas.  Thanks to major internal investments in the conversion of capital equipment, as well as the support provided by the PowerAmerica Institute at NC State University, X-FAB Texas has heavily upgraded its manufacturing resources in order to ma...

X-FAB Silicon Foundries has announced the establishing of its X-Cite Award Programme. X-Cite will allow engineering teams to experiment with more imaginative design concepts using the semiconductor processes provided by X-FAB as a foundation. Fabless semiconductor companies as well as research establishments experienced in IC development will all be eligible to enter the award programme. The winner will then be given a free prototyping run to val...

X-FAB Silicon Foundries has announced it will expand the capacity and capabilities of its Kuching-based foundry operation, X-FAB Sarawak, to meet accelerating demand for its core technologies, the 0.18 and 0.35µm process platforms. With revenue having grown 25% for each of the past two years and similar growth expected for the next two years, X-FAB plans to invest a total of $114m between 2015 and 2017. This includes capex spending amountin...

X-FAB Silicon Foundries has introduced XS018, the first specialised 0.18µm CMOS process for fast and large image sensor pixels. Unlike the 4-transistor pixels used in consumer products such as mobile phones and digital cameras, which have small sizes, the XS018 technology is the first to support high-speed large pixels required for medical and scientific applications such as computer tomography and x-ray scanners for 3D images.

Transistors that have drastically reduced flicker noise on its mixed-signal 0.35µm and 0.18µm CMOS process platforms have been introduced by X-FAB Silicon Foundries. Flicker noise in CMOS MOSFETs has been reduced in both the n-channel device in the XH035 0.35µm process and the p-channel device in the XH018 0.18µm process by a factor of five, thereby setting the industry benchmark.

X-FAB Silicon Foundries has announced the industry’s first cost-efficient 180nm SOI technology for automotive and industrial applications that need to operate in harsh environments. X-FAB’s suite of 40 and 60V high-voltage devices for its XT018 180nm SOI platform outperforms bulk CMOS technologies and provides cost savings of up to 30%.