Transphorm, Inc.

115 Castilian Drive
Goleta, CA
United States of America

Phone: (805) 456-1300


Transphorm, Inc. articles

Displaying 1 - 10 of 10

Gen III GaN FET reduces EMI and gate noise immunity for quieter switching

Gen III GaN FET reduces EMI and gate noise immunity for quieter switching
  Power transistors, based on Transphorm’s third generation of GaN technology exhibit lower EMI and increased gate noise immunity. The company believes it offers the only JEDEC and AEC-Q101-qualified GaN FETs in the market today.
2nd July 2018

GaN FET is first to be qualified to 650V

GaN FET is first to be qualified to 650V
Claimed to have the lowest Rds(on) in a TO-247 package, the TPH3207WS GaN FET was announced at PCIM 2016 by Transphorm
16th May 2016

600V GaN transistor is 'industry's first' in TO-247 package

600V GaN transistor is 'industry's first' in TO-247 package
From APEC 2015, Transphorm has announced that it is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in an TO-247 package. Offering resistance of 63 mΩ and 34A ratings, the device utilises the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications.
17th March 2015

Patents for GaN power conversion are granted

Patents in the area of GaN (Gallium Nitride) power conversion, directed towards the operation and use of GaN transistors, have been secured by Transphorm. Patent application number 8,816,751 entitled "Ip" was granted by the United States Patent and Trademark Office (USPTO) on 26th August, 2014, while 13/887,204 entitled "Bridge Circuits and Their Components" was granted on 27th August 2014.
5th September 2014

PCIM 2014: Transphorm, HY-Line Ink Central Europe Pact

HY-LINE Power Components has signed a distribution agreement with Transphorm to stock and distribute its family of 600 Volt GaN high electron mobility transistors (HEMTs) in Central Europe. The deal was unveiled during the PCIM exhibition in Nuremberg. HY-Line’s technical expertise will support the growing demand for JEDEC-qualified 600 Volt GaN products that have now grown to the level requiring an expanding sales channel to respond to opportunities, specifically in Germany, Switzerland and Austria.
21st May 2014

Transphorm appoints V.P. of Sales

Transphorm appoints V.P. of Sales
Bret Daniels has joined Transphorm as its V.P. of Sales, assuming responsibility for growing Transphorm’s revenue as more customers move their designs into production. This appointment validates Transphorm’s leadership in providing GaN-based power conversion in power supplies and adapters, motor drives, solar panels and electric vehicles.
12th May 2014

JEDEC-qualified 600V GaN-on-Silicon family expanded

JEDEC-qualified 600V GaN-on-Silicon family expanded
At APEC 2014, Transphorm announce what they believe to be the industry’s first 600V GaN-based, low-profile PQFN products and the expansion of its product portfolio in the industry-standard TO220 packages. The 600V GaN HEMTs (high electron mobility transistors) utilise the company’s patented, high-performance EZ-GaN technology.
19th March 2014

Transphorm present GaN industry sessions at AEPC

Firmly establishing the company at the forefront of GaN (Gallium Nitride) technology, Transphorm has announced that it will present two “Industry Sessions” presentations at APEC 2014. At last year’s APEC show, Transphorm introduced what they believe to be the first and only 600V JEDEC-qualified GaN-on-Silicon HEMTs (high electron mobility transistors).
5th March 2014

Transphorm acquires Fujitsu’s GaN Power Conversion business

Following Transphorm's acquisition of Fujitsu’s GaN Power Conversion business, the two companies have announced the formation of a new company: Transphorm-Japan, a wholly-owned subsidiary of Transphorm. This combines Transphorm’s commercially qualified GaN devices with Fujitsu’s internal market demand, resulting in: over 250 total combined patents; access to a high-quality, high-scale foundry in Japan; and capacity to support global demand.
9th December 2013

Transphorm Releases First JEDEC-Qualified 600 Volt GaN on Silicon Power Devices

Transphorm today announced the Total GaN family of GaN on silicon transistors and diodes, establishing the world’s first JEDEC-qualified 600 V GaN device platform. This marks a significant milestone in the broad adoption of GaN-based power electronics in power supplies and adapters, PV inverters for solar panels, motor drives, as well as power conversion for electric vehicles.
17th May 2013

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